Self-Powered Ultra-Broadband and Flexible Photodetectors Based on the Bismuth Films by Vapor Deposition

被引：22
|
作者：
Zhou, Qianqi [1 ,2 ]
Lu, Donglin [1 ,2 ]
Tang, Han [1 ,2 ]
Luo, Siwei [1 ,2 ]
Li, Zhenqing [1 ,2 ]
Li, Hongxing [1 ,2 ]
Qi, Xiang [1 ,2 ]
Zhong, Jianxin [1 ,2 ]
机构：
[1] Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Lab Quantum Engn & Micronano Energy Technol, Xiangtan 411105, Hunan, Peoples R China
[2] Xiangtan Univ, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R China
来源：
ACS APPLIED ELECTRONIC MATERIALS | 2020年 / 2卷 / 05期
基金：
中国国家自然科学基金;
关键词：
photodetector; Bi films; self-powered; ultra-broadband; flexible; vapor deposition; LARGE-AREA; ULTRAVIOLET PHOTODETECTORS; PHOTORESPONSE PROPERTIES; UV PHOTODETECTORS; MOS2; TRANSPARENT; DRIVEN; POLARIZATION; RESPONSIVITY; TRANSITION;
D O I：
10.1021/acsaelm.0c00058
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Bismuth (Bi), as a topological semimetallic material, has received widespread attention on account of its fascinating properties. Here, Bi films were successfully grown through a direct and facile vapor deposition method on 300 nm SiO2/Si (SiO2) and polyimide (PI) substrates. The Bi films were utilized further to fabricate rigid and flexible photodetectors. The rigid photodetector based on Bi/SiO2 shows fast, highly stable, self-powered, and ultra-broadband photoresponses. The flexible Bi/PI photodetector exhibits durability and reproducibility in photoresponse behaviors under bending with various curvature radii and after hundreds of bending cycles. Our results demonstrated that the Bi films by vapor deposition have great application potentials in the next generation of optoelectronic devices.
引用
收藏
页码：1254 / 1262
页数：9
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