Layer-number determination in graphene by out-of-plane phonons

被引：42

作者：

Herziger, Felix ^{[1
]}

May, Patrick ^{[1
]}

Maultzsch, Janina ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

PHYSICAL REVIEW B | 2012年 / 85卷 / 23期

基金：

欧洲研究理事会;

关键词：

RAMAN-SPECTROSCOPY; BAND-GAP; TRILAYER GRAPHENE; BILAYER GRAPHENE; SCATTERING; THICKNESS; GRAPHITE; RATIO;

D O I：

10.1103/PhysRevB.85.235447

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present and discuss a double-resonant Raman mode in few-layer graphene that is able to probe the number of graphene layers. This so-called N mode on the low-frequency side of the G mode results from a double-resonant Stokes-anti-Stokes process combining an longitudinal optical (LO) and an out-of-plane (ZO') phonon. Simulations of the double-resonant Raman spectra in bilayer graphene show very good agreement with the experiments.

引用

页数：5

共 34 条

[31] Raman studies of monolayer graphene: The substrate effect [J].

Wang, Ying Ying ;

Ni, Zhen Hua ;

Yu, Ting ;

Shen, Ze Xiang ;

Wang, Hao Min ;

Wu, Yi Hong ;

Chen, Wei ;

Wee, Andrew Thye Shen .

JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (29) :10637-10640

[32] Graphene Field-Effect Transistors with High On/Off Current Ratio and Large Transport Band Gap at Room Temperature [J].

Xia, Fengnian ;

Farmer, Damon B. ;

Lin, Yu-ming ;

Avouris, Phaedon .

NANO LETTERS, 2010, 10 (02) :715-718

[33] Interference effect on Raman spectrum of graphene on SiO2/Si [J].

Yoon, Duhee ;

Moon, Hyerim ;

Son, Young-Woo ;

Choi, Jin Sik ;

Park, Bae Ho ;

Cha, Young Hun ;

Kim, Young Dong ;

Cheong, Hyeonsik .

PHYSICAL REVIEW B, 2009, 80 (12)

[34] Direct observation of a widely tunable bandgap in bilayer graphene [J].

Zhang, Yuanbo ;

Tang, Tsung-Ta ;

Girit, Caglar ;

Hao, Zhao ;

Martin, Michael C. ;

Zettl, Alex ;

Crommie, Michael F. ;

Shen, Y. Ron ;

Wang, Feng .

NATURE, 2009, 459 (7248) :820-823

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