Layer-number determination in graphene by out-of-plane phonons

被引：42

作者：

Herziger, Felix ^{[1
]}

May, Patrick ^{[1
]}

Maultzsch, Janina ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

PHYSICAL REVIEW B | 2012年 / 85卷 / 23期

基金：

欧洲研究理事会;

关键词：

RAMAN-SPECTROSCOPY; BAND-GAP; TRILAYER GRAPHENE; BILAYER GRAPHENE; SCATTERING; THICKNESS; GRAPHITE; RATIO;

D O I：

10.1103/PhysRevB.85.235447

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present and discuss a double-resonant Raman mode in few-layer graphene that is able to probe the number of graphene layers. This so-called N mode on the low-frequency side of the G mode results from a double-resonant Stokes-anti-Stokes process combining an longitudinal optical (LO) and an out-of-plane (ZO') phonon. Simulations of the double-resonant Raman spectra in bilayer graphene show very good agreement with the experiments.

引用

页数：5

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