GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion

被引：58

作者：

Li, X. ^{[1
,2
]}

Amirifar, N. ^{[1
]}

Geens, K. ^{[1
]}

Zhao, M. ^{[1
]}

Guo, W. ^{[1
]}

Liang, H. ^{[1
]}

You, S. ^{[1
]}

Posthuma, N. ^{[1
]}

De Jaeger, B. ^{[1
]}

Stoffels, S. ^{[1
]}

Bakeroot, B. ^{[1
]}

Wellekens, D. ^{[1
]}

Vanhove, B. ^{[1
]}

Cosnier, T. ^{[1
]}

Langer, R. ^{[1
]}

Marcon, D. ^{[1
]}

Groeseneken, G. ^{[1
,2
]}

Decoutere, S. ^{[1
]}

机构：

[1] IMEC, Leuven, Belgium

[2] Katholieke Univ Leuven, Dept Elect Engn, Leuven, Belgium

来源：

2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2019年

关键词：

D O I：

10.1109/iedm19573.2019.8993572

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first comprehensive research about GaN power integrated circuits (ICs) on GaN-on-SOI (silicon-on-insulator). Specific stepped (Al)GaN superlattice buffer and highly robust deep trench isolation are developed. Various components including HEMT, metal-insulator-metal (MIM) capacitor, Schottky barrier diode (SBD), two-dimensional electron gas (2DEG) resistor, and resistor-transistor logic (RTL) are co-integrated, compatible with the p-GaN technology. Based on these achievements, 200 V GaN HEMT with integrated driver shows an extraordinary switching performance. A 48V-to-1V single-stage buck converter is realized using a GaN half-bridge with integrated on-chip drivers. Further, an all-GaN buck converter containing a smart control pulse-width modulation (PWM) circuit, dead-time control, drivers, and half-bridge is successfully designed using the GaN IC platform process design kit (PDK).

引用

页数：4

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