Absolute lattice parameter measurement

被引：23
作者：
Fewster, PF [1 ]
机构：
[1] Philips Res Labs, Cross Oak Lane, Redhill RH1 5HA, Surrey, England
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1999年 / 10卷 / 03期
关键词：
D O I：
10.1023/A:1008935709977
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Absolute lattice parameter methods are useful for determining alloy composition, understanding point defects and dopants in semiconductor substrate materials and for the evaluation of lattice relaxation in heteroepitaxial layers. This paper reviews the techniques available. The assumptions and uncertainties of each technique are discussed.
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收藏
页码：175 / 183
页数：9
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