Advanced Modeling of Oxide Defects for Random Telegraph Noise

被引：0

作者：

Goes, W. ^{[1
]}

Schanovsky, F. ^{[1
]}

Grasser, T. ^{[1
]}

Reisinger, H. ^{[2
]}

Kaczer, B. ^{[3
]}

机构：

[1] TU Wien, Inst Microelect, Vienna, Austria

[2] Infineon Technol AG, Munich, Germany

[3] IMEC, Leuven, Belgium

来源：

2011 21ST INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF) | 2011年

关键词：

TRAPS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The results from a recently developed measurement technique, called time-dependent defect spectroscopy (TDDS), have shed new light on reliability issues, such as random telegraph noise (RTN) and the negative bias instability (NBTI). It has been found that established models fail to explain these findings. A refined charge trapping model is suggested by assuming additional metastable defect configurations. Thereby, we can give an explanation for the new TDDS findings while remaining consistent with results obtained from conventional RTN analysis.

引用

页码：204 / 207

页数：4

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