Shallow and deep donors in transport properties of N-implanted 6H-SiC

被引：3
|
作者：
Thomas, P
Contreras, S
Robert, JL
Zawadzki, W
Gimbert, J
Billon, T
机构：
[1] Univ Montpellier 2, CNRS, UMR 5650, GES, F-34095 Montpellier 5, France
[2] CEA, Dept Microtechnol, LETI, F-38054 Grenoble, France
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 61-2卷
关键词：
SiC; nitrogen implantation; transport properties;
D O I：
10.1016/S0921-5107(98)00522-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Transport properties of N-implanted 6H-SiC samples are studied between 30 and 1000 K. The Hall effect and mobility behaviors are interpreted in the framework of a two impurity level model. The temperature dependence of mobility is calculated including all scattering processes which are of importance for SiC in the studied temperature range. Our results show that the impurity center associated with the hexagonal site behaves like a shallow level, whereas that associated with the cubic site is well described by a localized state. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：301 / 304
页数：4
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