Investigations of carrier scattering into L-valley in λ=3.5 μm InGaAs/AlAs(Sb) quantum cascade lasers using high hydrostatic pressure

被引：7

作者：

Aldukhayel, A. ^{[1
,2
]}

Jin, S. R. ^{[1
,2
]}

Marko, I. P. ^{[1
,2
]}

Zhang, S. Y. ^{[3
]}

Revin, D. G. ^{[4
]}

Cockburn, J. W. ^{[4
]}

Sweeney, S. J. ^{[1
,2
]}

机构：

[1] Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England

[2] Univ Surrey, Dept Phys, Guildford GU2 7XH, Surrey, England

[3] Univ Sheffield, EPSRC Natl Ctr Technol 3 5, Sheffield S1 3JD, S Yorkshire, England

[4] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2013年 / 250卷 / 04期

基金：

英国工程与自然科学研究理事会;

关键词：

carrier scattering; high pressure; quantum cascade lasers;

D O I：

10.1002/pssb.201200848

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In order to identify the performance limitations of InGaAs/AlAs(Sb) quantum cascade lasers, experimental investigations of the temperature and pressure dependencies of the threshold current (I-th) were undertaken. Using the theoretical optical phonon current (I-ph) and carrier leakage (I-leak) to fit the measured threshold current at various pressures, we show that the electron scattering from the top lasing level to the upper L-minima gives rise to the increase in I-th with pressure and temperature. It was found that this carrier leakage path accounts for approximately 3% of I-th at RT and is negligible at 100 K. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：693 / 697

页数：5

共 15 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29

[2] Semiconductor optoelectronic devices [J].

Adams, AR ;

Silver, M ;

Allam, J .

HIGH PRESSURE IN SEMICONDUCTOR PHYSICS II, 1998, 55 :301-352

[3] Suppression of carrier leakage in 4.8 μm - emitting quantum cascade lasers [J].

Botez, D. ;

Shin, J. C. ;

Mawst, L. J. ;

Vurgaftman, I. ;

Meyer, J. R. ;

Kumar, S. .

NOVEL IN-PLANE SEMICONDUCTOR LASERS IX, 2010, 7616

[4] Quantum cascade lasers emitting near 2.6 μm [J].

Cathabard, O. ;

Teissier, R. ;

Devenson, J. ;

Moreno, J. C. ;

Baranov, A. N. .

APPLIED PHYSICS LETTERS, 2010, 96 (14)

[5] High peak power λ∼3.3 and 3.5 μm InGaAs/AlAs(Sb) quantum cascade lasers operating up to 400 K [J].

Commin, J. P. ;

Revin, D. G. ;

Zhang, S. Y. ;

Krysa, A. B. ;

Kennedy, K. ;

Cockburn, J. W. .

APPLIED PHYSICS LETTERS, 2010, 97 (03)

[6] Recent progress in quantum cascade lasers and applications [J].

Gmachl, C ;

Capasso, F ;

Sivco, DL ;

Cho, AY .

REPORTS ON PROGRESS IN PHYSICS, 2001, 64 (11) :1533-1601

[7] Spectroscopy of GaAs/AlGaAs quantum-cascade lasers using hydrostatic pressure [J].

Jin, S. R. ;

Ahmad, C. N. ;

Sweeney, S. J. ;

Adams, A. R. ;

Murdin, B. N. ;

Page, H. ;

Marcadet, X. ;

Sirtori, C. ;

Tomic, S. .

APPLIED PHYSICS LETTERS, 2006, 89 (22)

[8] High-pressure studies of recombination mechanisms in 1.3-μm GaInNAs quantum-well lasers [J].

Jin, SR ;

Sweeney, SJ ;

Tomic, S ;

Adams, AR ;

Riechert, H .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2003, 9 (05) :1196-1201

[9] Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressure [J].

Marko, Igor P. ;

Adams, Alfred R. ;

Sweeney, Stephen J. ;

Teissier, Roland ;

Baranov, Alexei N. ;

Tomic, Stanko .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2009, 246 (03) :512-515

[10] High-power short-wavelength quantum cascade lasers [J].

Masselink, WT ;

Semtsiv, MP ;

Dressler, S ;

Ziegler, M ;

Georgiev, N ;

Dekorsy, T ;

Helm, M .

Novel In-Plane Semiconductor Lasers IV, 2005, 5738 :13-24

← 1 2 →