How Much Will Gallium Oxide Power Electronics Cost?

被引：131

作者：

Reese, Samantha B. ^{[1
]}

Remo, Timothy ^{[1
]}

Green, Johney ^{[2
]}

Zakutayev, Andriy ^{[3
]}

机构：

[1] Natl Renewable Energy Lab, Strateg Energy Anal Ctr, Golden, CO 80401 USA

[2] Natl Renewable Energy Lab, Mech & Thermal Engn Sci Directorate, Golden, CO 80401 USA

[3] Natl Renewable Energy Lab, Ctr Mat Sci, Golden, CO 80401 USA

来源：

JOULE | 2019年 / 3卷 / 04期

关键词：

D O I：

10.1016/j.joule.2019.01.011

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Power electronics are used to convert between different forms of electrical energy, representing an enormous technological and financial growth opportunity. SiC semiconductor has wider bandgap and offers higher energy conversion efficiencies than Si, but at higher cost. Here, we show by modeling that the wafer cost of an emerging Ga2O3 wide bandgap semiconductor can be >3× lower compared to SiC. This lower cost of the Ga2O3 wafers should lead to less-expensive high-performance power electronic devices in the future. © 2019

引用

页码：903 / 907

页数：6

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