Effects of crystallinity and point defects on optoelectronic applications of β-Ga2O3 epilayers

被引：66

作者：

Ravadgar, Parvaneh ^{[1
,2
]}

Horng, Ray-Hua ^{[1
,2
,3
]}

Yao, Shu-De ^{[4
]}

Lee, Hsin-Ying ^{[1
,2
]}

Wu, Bing-Rui ^{[5
]}

Ou, Sin-Liang ^{[5
]}

Tu, Li-Wei ^{[6
,7
]}

机构：

[1] Natl Cheng Kung Univ, Dept Photon, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[3] Natl Chung Hsing Univ, Grad Inst Precis Engn, Taichung 40227, Taiwan

[4] Peking Univ, State Key Lab Nucl Phys & Technol, Beijing 100871, Peoples R China

[5] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan

[6] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[7] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 80424, Taiwan

来源：

OPTICS EXPRESS | 2013年 / 21卷 / 21期

关键词：

PHOTODETECTOR; EFFICIENCY; SURFACE; STATES;

D O I：

10.1364/OE.21.024599

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This study evaluates the effect of crystallinity and point defects on time-dependent photoresponsivity and the cathodoluminescence (CL) properties of beta-Ga2O3 epilayers. A synchrotron high-resolution X-ray technique was used to understand the crystalline structure of samples. Rutherford backscattering spectroscopy was used to determine the net chemical composition of the samples to examine the type and ratio of their possible point defects. The results show that in functional time-dependent photoresponsivity of photodetectors based on beta-Ga2O3 epilayers, point defects contribution overcomes the contribution of crystallinity. However, the crystalline structure affects the intensities and emission regions of CL spectra more than point defects. (C)2013 Optical Society of America

引用

页码：24599 / 24610

页数：12