Effect of Al2O3 Passivation on Electrical Properties of β-Ga2O3 Field-Effect Transistor

被引：23

作者：

Ma, Jiyeon ^{[1
]}

Lee, Oukjae ^{[2
]}

Yoo, Geonwook ^{[1
]}

机构：

[1] Soongsil Univ, Sch Elect Engn, Seoul 06938, South Korea

[2] Korea Inst Sci & Technol, Ctr Spintron, Seoul 02792, South Korea

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2019年 / 7卷 / 01期

关键词：

beta-Ga2O3; passivation; surface depletion; SINGLE-CRYSTALS;

D O I：

10.1109/JEDS.2019.2912186

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the effect of Al2O3 surface passivation on electrical properties of beta-gallium oxide (beta-Ga2O3) nanomembrane field-effect transistor (FET). The fabricated bottom-gate beta-Ga2O3(100) FET exhibits enhanced channel conductance and reduced hysteresis after the conformal atomic layer deposited Al2O3 passivation investigated by high-resolution transmission electron microscope (HR-TEM) analysis. Moreover, abnormal positive threshold voltage (VTH) shifts under negative bias stress are turned into negative VTH shifts, and off-state breakdown characteristics is improved as well. A modeling work using physics-based TCAD shows reduced surface depletion effect after the surface passivation. The results demonstrate that high-quality ALD-Al2O3 surface passivation is an effective method to improve electrical properties of the bottom-gate beta-Ga2O3 FET and its device applications.

引用

页码：512 / 516

页数：5

共 26 条

[1] Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method [J].

Aida, Hideo ;

Nishiguchi, Kengo ;

Takeda, Hidetoshi ;

Aota, Natsuko ;

Sunakawa, Kazuhiko ;

Yaguchi, Yoichi .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (11) :8506-8509

[2]

[Anonymous], 2013, 23 ATLAS SILVACO

[3] SEMICONDUCTORS FOR HIGH-VOLTAGE, VERTICAL CHANNEL FIELD-EFFECT TRANSISTORS [J].

BALIGA, BJ .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1759-1764

[4] Charge Trapping in Al2O3/β-Ga2O3-Based MOS Capacitors [J].

Bhuiyan, Maruf A. ;

Zhou, Hong ;

Jiang, Rong ;

Zhang, En Xia ;

Fleetwood, Daniel M. ;

Ye, Peide D. ;

Ma, Tso-Ping .

IEEE ELECTRON DEVICE LETTERS, 2018, 39 (07) :1022-1025

[5] Analysis of Bias Stress Instability in Amorphous InGaZnO Thin-Film Transistors [J].

Cho, Edward Namkyu ;

Kang, Jung Han ;

Kim, Chang Eun ;

Moon, Pyung ;

Yun, Ilgu .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2011, 11 (01) :112-117

[6] Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method [J].

Galazka, Zbigniew ;

Uecker, Reinhard ;

Klimm, Detlef ;

Irmscher, Klaus ;

Naumann, Martin ;

Pietsch, Mike ;

Kwasniewski, Albert ;

Bertram, Rainer ;

Ganschow, Steffen ;

Bickermann, Matthias .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (02) :Q3007-Q3011

[7] Guest Editorial: The dawn of gallium oxide microelectronics [J].

Higashiwaki, Masataka ;

Jessen, Gregg H. .

APPLIED PHYSICS LETTERS, 2018, 112 (06)

[8] Recent progress in Ga2O3 power devices [J].

Higashiwaki, Masataka ;

Sasaki, Kohei ;

Murakami, Hisashi ;

Kumagai, Yoshinao ;

Koukitu, Akinori ;

Kuramata, Akito ;

Masui, Takekazu ;

Yamakoshi, Shigenobu .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 31 (03)

[9] High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes [J].

Hwang, Wan Sik ;

Verma, Amit ;

Peelaers, Hartwin ;

Protasenko, Vladimir ;

Rouvimov, Sergei ;

Xing, Huili ;

Seabaugh, Alan ;

Haensch, Wilfried ;

Van de Walle, Chris G. ;

Galazka, Zbigniew ;

Albrecht, Martin ;

Fornari, Roberto ;

Jena, Debdeep .

APPLIED PHYSICS LETTERS, 2014, 104 (20)

[10] Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method [J].

Irmscher, K. ;

Galazka, Z. ;

Pietsch, M. ;

Uecker, R. ;

Fornari, R. .

JOURNAL OF APPLIED PHYSICS, 2011, 110 (06)

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