Implementation of an a-Si:H TFT Gate Driver Using a Five-Transistor Integrated Approach

被引：17
|
作者：
Liao, Congwei [1 ]
He, Changde [2 ]
Chen, Tao [1 ]
Dai, David [3 ]
Chung, Smart [3 ]
Jen, T. S. [3 ]
Zhang, Shengdong [1 ,4 ]
机构：
[1] Peking Univ, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China
[2] N Univ China, Sch Elect & Comp Sci & Technol, Taiyuan 030051, Peoples R China
[3] InfoVis Optoelect Corp Ltd, Inst Jiangsu FPD Technol & Res, Kunshan 215301, Peoples R China
[4] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 08期
关键词：
Amorphous silicon; gate driver; multiple-phase clocks; thin-film transistors (TFTs); threshold-voltage shift; THIN-FILM TRANSISTORS; AMORPHOUS-SILICON TFTS; CIRCUITS; DESIGN; STRESS;
D O I：
10.1109/TED.2012.2197624
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An integrated five-transistor/one-capacitor approach for realizing a a-Si:H thin-film transistor (TFT) gate driver operating in multiphase-clock mode is proposed and investigated. The driver needs only one large-size TFT and one small-size storage capacitor. The performance and function of the proposed driver are verified experimentally. The dependence of the performance on the device size is studied in detail. Stability of the fabricated drivers is tested using a flexible measurement scheme. Measured results show that the fabricated gate driver can work stably even though the low-level-holding TFTs have a threshold-voltage shift of 19 V.
引用
收藏
页码：2142 / 2148
页数：7
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