Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction

被引：210

作者：

Nakagomi, Shinji ^{[1
]}

Momo, Toshihiro ^{[1
]}

Takahashi, Syuhei ^{[1
]}

Kokubun, Yoshihiro ^{[1
]}

机构：

[1] Ishinomaki Senshu Univ, Fac Sci & Engn, Dept Informat Technol & Elect, Ishinomaki, Miyagi 9868580, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 07期

关键词：

THIN-FILMS; PHOTODETECTORS;

D O I：

10.1063/1.4818620

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A deep Ultraviolet (UV) photodiode was fabricated using a heterojunction between beta-Ga2O3 with a band gap of 4.9 eV, and 6H-SiC with a band gap of 3.02 eV, and investigated its UV sensitivity. A thin beta-Ga2O3 layer (200 nm) was prepared on a p-type 6H-SiC substrate through gallium evaporation in oxygen plasma. The device showed good rectifying properties. Under reverse bias, the current increased linearly with increasing deep-UV light intensity. The responsivity of the photodiode was highest to deep-UV light below a wavelength of 260 nm. The photodiode's response time to deep-UV light was in the order of milliseconds. (C) 2013 AIP Publishing LLC.

引用

页数：4

共 16 条

[1] Chemical vapour deposition and characterization of gallium oxide thin films [J].