In situ Observation of Formation Process of Negative Electron Affinity Surface of GaAs by Surface Photo-Absorption

被引：10

作者：

Hayase, Kazuya ^{[1
]}

Nishitani, Tomohiro ^{[2
,3
]}

Suzuki, Katsunari ^{[1
]}

Imai, Hironobu ^{[1
]}

Hasegawa, Jun-ichi ^{[1
]}

Namba, Daiki ^{[1
]}

Meguro, Takashi ^{[1
]}

机构：

[1] Tokyo Univ Sci, Sinjuku, Tokyo 1628601, Japan

[2] Nagoya Univ, Nagoya, Aichi 4648603, Japan

[3] RIKEN, Wako, Saitama 3510198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 06期

关键词：

TEMPERATURE-PROGRAMMED DESORPTION; ADSORPTION-KINETICS; ACTIVATION LAYER; GROWTH-PROCESS; CS; PHOTOCATHODES; STABILITY; GAAS(100); CO2; GAN;

D O I：

10.7567/JJAP.52.06GG05

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used surface photo-absorption (SPA) to investigate the formation of negative electron affinity (NEA) surfaces on p-GaAs during the Yo-Yo method, under an alternating supply of Cs and O-2. The SPA spectra showed that the surface during the first Cs step was different from those in the following Cs and O-2 steps. This suggests that the surface structure did not change after the initial surface was formed, indicating that there could be two Cs adsorption sites on the GaAs surface, which is different from previously proposed models. (c) 2013 The Japan Society of Applied Physics

引用

页数：3

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