The impact of gate dielectric nitridation methodology on NBTI of SiON p-MOSFETs as studied by UF-OTF technique

被引：0

作者：

Maheta, V. D. ^{[1
]}

Olsen, C. ^{[2
]}

Ahmed, K. ^{[2
]}

Mahapatra, S. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Bombay, Maharashtra, India

[2] Appl Mat Inc, Santa Calara, CA USA

来源：

IPFA 2008: PROCEEDINGS OF THE 15TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of gate dielectric nitridation methodology on time, temperature and field dependence of NBTI in SiON pMOSFETs is studied using Ultra-Fast On-The-Fly I-DLIN technique with 1 mu s resolution. It is shown that PNO devices with proper PNA show lower degradation magnitude, higher field dependence and therefore higher safe operating voltage compared to RTNO and PNO devices with improper PNA despite atomic N% is higher in PNO devices with proper PNA.

引用

页码：255 / +

页数：3

共 25 条

[1]

[Anonymous], 2005, PROC IEEE INT ELECT

[2]

[Anonymous], 1999, P S VLSI TECH

[3] Dynamic NBTI of pMOS transistors and its impact on device lifetime [J].

Chen, G ;

Chuah, KY ;

Li, MF ;

Chan, DS ;

Ang, CH ;

Zheng, JZ ;

Jin, Y ;

Kwong, DL .

41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2003, :196-202

[4] On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET's [J].

Denais, M ;

Bravaix, A ;

Huard, V ;

Parthasarathy, C ;

Ribes, G ;

Perrier, F ;

Rey-Tauriac, Y ;

Revil, N .

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :109-112

[5] Dynamic recovery of negative bias temperature instability in p-type metal-oxide-semiconductor field-effect transistors [J].

Ershov, M ;

Saxena, S ;

Karbasi, H ;

Winters, S ;

Minehane, S ;

Babcock, J ;

Lindley, R ;

Clifton, P ;

Redford, M ;

Shibkov, A .

APPLIED PHYSICS LETTERS, 2003, 83 (08) :1647-1649

[6] Physical modeling of negative bias temperature instabilities for predictive extrapolation [J].

Huard, V. ;

Parthasarathy, C. R. ;

Guerin, C. ;

Denais, M. .

2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL, 2006, :733-+

[7] Theory and practice of on-the-fly and ultra-fast VT measurements for NBTI degradation Challenges and opportunities [J].

Islam, A. E. ;

Kumar, E. N. ;

Das, H. ;

Purawat, S. ;

Maheta, V. ;

Aono, H. ;

Murakami, E. ;

Mahapatra, S. ;

Alam, M. A. .

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, :805-+

[8] Recent issues in negative-bias temperature instability: Initial degradation, field dependence of interface trap generation, hole trapping effects, and relaxation [J].

Islam, Abmad Ehteshamul ;

Kufluoglu, Haldun ;

Varghese, Dhanoop ;

Mahapatra, Souvik ;

Alam, Muhammad Ashraful .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (09) :2143-2154

[9] Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification [J].

Kaczer, B ;

Arkhipov, V ;

Degraeve, R ;

Collaert, N ;

Groeseneken, G ;

Goodwin, M .

2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL, 2005, :381-387

[10] Physical models for predicting plasma nitrided Si-O-N gate dielectric properties from physical metrology [J].

Kraus, PA ;

Ahmed, KZ ;

Olsen, CS ;

Nouri, F .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (09) :559-561

← 1 2 3 →