Realization of p-type non-polar a-plane ZnO films via doping of Na acceptor

被引：16

作者：

Ding, P. ^{[1
]}

Pan, X. H. ^{[1
]}

Ye, Z. Z. ^{[1
]}

Huang, J. Y. ^{[1
]}

Zhang, H. H. ^{[1
]}

Chen, W. ^{[1
]}

Zhu, C. Y. ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2013年 / 156卷

基金：

国家教育部博士点专项基金资助; 中国博士后科学基金; 中国国家自然科学基金;

关键词：

Non-polar ZnO; p-Type conductivity; Molecular beam epitaxy; MOLECULAR-BEAM EPITAXY; DOPED ZNO; SAPPHIRE; GROWTH; AUGER;

D O I：

10.1016/j.ssc.2012.11.014

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

p-Type non-polar ZnO films have been realized via doping of Na acceptor on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The film is (11 (2) over bar0) oriented (a-plane) as identified by the X-ray diffraction pattern. Structural properties are anisotropic and surfaces of films show stripes running along the ZnO [0001] direction. Secondary ion mass spectroscopy confirmed that Na has been doped into ZnO films. The chemical states of Na were analyzed by x-ray photoelectron spectroscopy. Deep level emission is dominant in room-temperature photoluminescence, which is mainly due to oxygen vacancy. With an effective incorporation of Na, Na-doped non-polar ZnO film exhibits p-type conductivity with a hole concentration of 1.81 x 10(15) cm(-3), a Hall mobility of 0.402 cm(2) V-1 s(-1), and a resistivity of 8575 Omega cm, respectively. The origin of weak p-type behavior is most likely a certain amount of oxygen vacancies existed in the film, which partly compensates Na acceptor. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：8 / 11

页数：4

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