Local structure, magnetic and electronic properties of N-doped α-Cr2O3 from the first-principles

被引:14
作者
Stashans, Arvids [1 ]
Jacome, Soraya [1 ,2 ]
机构
[1] Univ Tecn Particular Loja, Grp Fisicoquim Mat, Loja, Ecuador
[2] Univ Tecn Particular Loja, Escuela Ingn Quim, Loja, Ecuador
关键词
alpha-Cr2O3; N-doping; Local structure; Electronic properties; Magnetism; DFT; TOTAL-ENERGY CALCULATIONS; OXIDE THIN-FILMS; CHROMIUM; DEPOSITION; ALGORITHM;
D O I
10.1016/j.commatsci.2013.08.042
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
First-principles calculations based on the density functional theory (DFT) within the generalized gradient approximation (GGA) have been used to study the defective alpha-Cr2O3 crystal. Structural, electronic and magnetic properties have been investigated in the periodic crystalline structure containing one and/ or two N impurities. Local structure of defective region reveals a polarization around the impurity due to the atomic distortions. Presence of the N atom reduces the band-gap width of the material. The dopant might induce a local energy state within the band-gap region for some specific impurity concentrations. Discovered changes upon the magnetic properties imply that chromium oxide might not act as an anti-ferromagnetic substance in the presence of N imperfection. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:353 / 357
页数:5
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