Regrowth of self-assembled InAs quantum dots on nanohole and stripe templates

被引：2

作者：

Suraprapapich, Suwaree ^{[1
]}

Kanjanachuchai, Songphol ^{[1
]}

Thainoi, Supachok ^{[1
]}

Panyakeow, Somsak ^{[1
]}

机构：

[1] Chulalongkorn Univ, Semicond Device Res Lab, Dept Elect Engn, Bangkok 10330, Thailand

来源：

JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS | 2006年 / 5卷 / 01期

关键词：

quantum dots; InAs; molecular beam epitaxy;

D O I：

10.1117/1.2177287

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-assembled InAs quantum dots (QDs) are grown on two types of templates by molecular beam epitaxy (MBE). A nanohole template is prepared by first growing InAs QDs on a GaAs substrate by a standard MBE process, then capping the QDs with a thin latticemismatched layer of GaAs. Subsequent annealing of the nanohole template results in a stripe template. We are able to transfer the patterns of self-assembled QDs onto these two types of templates: regrowth on the nanohole template results in uniform QDs situated in the nanoholes, while regrowth on the stripe template results in chains of QDs aligned along the stripes. Our results imply that self-assembled QDs can be grown onto in-situ prepared patterned substrates, with limited degree of randomness. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

引用

页数：5

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