Subvolt turn-on voltage self-align gate diamond emitter fabricated by self-align-gate-sharpened molding technique

被引:12
作者
Kang, WP
Wisitsora-at, A
Davidson, JL
Howell, M
Kerns, DV
Li, Q
Xu, F
机构
[1] Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 USA
[2] E China Normal Univ, Dept Elect Sci & Technol, Shanghai 200062, Peoples R China
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 02期
关键词
D O I
10.1116/1.590631
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A diamond field emitter diode array with subvolt turn-on voltage and high emission current is reported. The diamond field emitter diode array with self-align anode was fabricated using a new self-ali,on technique, "self-align-gate-sharpened molding." The emission current vs anode voltage of the self-align diamond emitter diode shows an extremely low turn-on voltage of 0.7 V, one of the lowest values reported in the field emission literatures. A high emission current of 4 mu A at an anode voltage of less than 5 V can be obtained from a 2 X 2 array of diamond tips. The turn-on voltage is comparable to conventional p-n:junction diode. (C) 1999 American Vacuum Society. [S0734-211X(99)03402-2].
引用
收藏
页码:740 / 743
页数:4
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