Large grain growth of Ge-rich Ge1-xSnx (x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water

被引：43

作者：

Kurosawa, Masashi ^{[1
,2
]}

Taoka, Noriyuki ^{[1
]}

Ikenoue, Hiroshi ^{[3
]}

Nakatsuka, Osamu ^{[1
]}

Zaima, Shigeaki ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] JSPS, Chiyoda Ku, Tokyo 1020083, Japan

[3] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Fukuoka 8190395, Japan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 06期

关键词：

SI; TEMPERATURE; FABRICATION;

D O I：

10.1063/1.4864627

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate Sn incorporation effects on the growth characteristics of Ge-rich Ge1-xSnx (x<0.02) on SiO2 crystallized by pulsed laser annealing (PLA) in air and water. Despite the very low Sn content of 2%, Sn atoms within the GeSn layers play a role in preventing ablation and aggregation of the layers during these PLA. Raman and electron backscatter diffraction measurements demonstrate achievement of large-grain (similar to 800 nm phi) growth of Ge0.98Sn0.02 polycrystals by using PLA in water. These polycrystals also show a tensile-strain of similar to 0.68%. This result opens up the possibility for developing GeSn-based devices fabricated on flexible substrates as well as Si platforms. (C) 2014 AIP Publishing LLC.

引用

页数：4

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