X-ray multiple diffraction (Umweganregung) in wurtzite-type GaN and ZnO epitaxial layers

被引：18

作者：

Bläsing, J ^{[1
]}

Krost, A ^{[1
]}

机构：

[1] Otto Von Guericke Univ, Inst Phys Expt, D-39016 Magdeburg, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2004年 / 201卷 / 04期

关键词：

D O I：

10.1002/pssa.200409030

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Internal X-ray multiple diffractions, also called umweganregungen, at the Bragg position of forbidden primary Bragg reflections (0001) are observed in wurtzite-type epitaxial ZnO and GaN layers grown by metal organic vapor phase epitaxy on different substrates. In combination with the simulation program UMWEG01 the umweganregungen can be used as a quick and nondestructive means for the evaluation of both the hexagonal lattice parameters and the crystalline quality in one measurement. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：R17 / R20

页数：4

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