High precision 180Hf ion implantation using a high-current ion implanter

The development of accurate mass spectrometry, enabling the identification of all the ions extracted from the ion source and further precise Hf-180 isotope implantation, in a high current implanter is described. The spectrometry system uses two signals (x-y graphic), one proportional to the magnetic field (x-axes), taken from the high-voltage potential with an optic fiber system, and the other proportional to the beam current intensity (y-axes), taken from a beam-stop. The ion beam mass register in a mass spectrum of all the elements magnetically analyzed with the same radius and defined by a pair of analyzing slits as a function of their beam intensity is presented. Hence, it is possible to implant Hf-180(+), with less than 1% contamination from neighboring isotopes, in order to conduct material characterization studies by Perturbed Angular Correlations. The precision of the low fluence ion implantation has been done by neutron activation analysis. (C) 2008 Elsevier B.V. All rights reserved.