P-doping of Si nanoparticles: The effect of oxidation

被引:18
|
作者
Carvalho, Alexandra [1 ]
Oberg, Sven [2 ]
Barroso, Manuel [1 ]
Rayson, Mark J. [2 ]
Briddon, Patrick [3 ]
机构
[1] Univ Aveiro, I3N, Dept Phys, P-3810193 Aveiro, Portugal
[2] Lulea Univ Technol, Dept Engn Sci & Math, S-97187 Lulea, Sweden
[3] Newcastle Univ, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2012年 / 209卷 / 10期
关键词
doping; nanoparticles; phosphorus; segregation; silicon; theory; PSEUDOPOTENTIALS;
D O I
10.1002/pssa.201200149
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The radial dependence of the formation energy of substitutional phosphorus in silicon nanoparticles covered by an amorphous oxide shell is analysed using local density functional theory calculations. It is found that P+ is more stable at the silicon core. This explains the experimental observation of segregation of phosphorus to the Si-rich regions in a material consisting of Si nanocrystals embedded in a SiO2 matrix [Perego et al., Nanotechnology 21, 025602 (2010)]. Formation energy of positively charged substitutional phosphorus in a 1.5?nm diameter Si nanoparticle covered by a similar to 2?nm-thick amorphous SiO2 shell, as a function of its distance to the centre.
引用
收藏
页码:1847 / 1850
页数:4
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