Tunnel electroresistance in junctions with ultrathin ferroelectric Pb(Zr0.2Ti0.8)O3 barriers

被引：96
|
作者：
Pantel, Daniel [1 ]
Lu, Haidong [2 ]
Goetze, Silvana [1 ]
Werner, Peter [1 ]
Kim, Dong Jik [2 ]
Gruverman, Alexei [2 ]
Hesse, Dietrich [1 ]
Alexe, Marin [1 ]
机构：
[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
[2] Univ Nebraska, Lincoln, NE 68588 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 23期
基金：
美国国家科学基金会;
关键词：
POLARIZATION; FIELD;
D O I：
10.1063/1.4726120
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In ferroelectric tunnel junctions, the ferroelectric polarization state of the barrier influences the quantum-mechanical tunneling through the junction, resulting in tunnel electroresistance (TER). Here, we investigate tunnel electroresistance in Co/PbZr0.2Ti0.8O3/La0.7Sr0.3MnO3 tunnel junctions. The ferroelectric polarization in tunnel junctions with 1.2-1.6 nm (three to four unit cells) PbZr0.2Ti0.8O3 thickness and an area of 0.04 mu m(2) can be switched by about 1 V yielding a resistive ON/OFF-ratio of about 300 at 0.4 V. Combined piezoresponse force microscopy and electronic transport investigations of these junctions reveal that the transport mechanism is quantum tunneling and the resistive switching in these junctions is due only to ferroelectric switching. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726120]
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页数：4
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