Charge carrier and spin doping in ZnO thin films

被引：41
作者：
Norton, DP [1 ]
Ivill, M
Li, Y
Kwon, YW
Erie, JM
Kim, HS
Ip, K
Pearton, SJ
Heo, YW
Kim, S
Kang, BS
Ren, F
Hebard, AF
Kelly, J
机构：
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] Kyungpook Natl Univ, Dept Inorgan Mat Engn, Taegu 702701, South Korea
[3] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[4] Univ Florida, Dept Phys, Gainesville, FL 32611 USA
来源：
THIN SOLID FILMS | 2006年 / 496卷 / 01期
关键词：
zinc oxide; semiconductors; magnetic properties and measurements;
D O I：
10.1016/j.tsf.2005.08.246
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Recent efforts on doping ZnO films for charge and spin functionality are reviewed, focusing on chemical doping for charge and spin device formation. Discussion includes the behavior of phosphorus as an acceptor and magnetism in transition metal-doped ZnO. Evidence for p-type behavior in phosphorus-doped (Zn,Mg)O grown by pulsed laser deposition is presented. The magnetic properties of ZnO co-doped with Mn and Sn are also discussed. (c) 2005 Elsevier B.V. All rights reserved.
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收藏
页码：160 / 168
页数：9
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