Surface electron transport over a helium film

被引：11
|
作者：
Coimbra, D [1 ]
Sokolov, SS
Rino, JP
Studart, N
机构：
[1] Univ Fed So Carlos, Dept Fs, BR-13565905 So Carlos, Brazil
[2] BI Verkin Inst Low Temp Phys & Engn, UA-61164 Kharkov, Ukraine
来源：
JOURNAL OF LOW TEMPERATURE PHYSICS | 2002年 / 126卷 / 1-2期
关键词：
Experimental Data; Helium; Film Thickness; Electron Transport; Magnetic Material;
D O I：
10.1023/A:1013750714268
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The mobility of surface electrons trapped over helium films covering solid substrates is calculated within the Boltzmann kinetic approach. It is shown that the electron mobility is dominated by the roughness scattering of the interface liquid helium-substrate. The mobility dependences on temperature and film thickness are determined and compared with available experimental data. The characteristic values for surface defect sizes of the substrate are in the mesoscopic scale.
引用
收藏
页码：505 / 510
页数：6
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