Effect of interface nucleation time of the GaN nucleation layer on the crystal quality of GaN film

被引:2
作者
Guo Rui-Hua
Lu Tai-Ping
Jia Zhi-Gang
Shang Lin
Zhang Hua
Wang Rong
Zhai Guang-Mei
Xu Bing-She [1 ]
机构
[1] Taiyuan Univ Technol, Key Lab Interface Sci & Engn Adv Mat, Minist Educ & Shanxi Prov, Taiyuan 030024, Peoples R China
基金
中国国家自然科学基金;
关键词
low temperature nucleation layer; metal-organic chemical vapor deposition; gallium nitride; dislocation; YELLOW LUMINESCENCE; DEFECT STRUCTURE; GROWTH; TEMPERATURE; EVOLUTION; SAPPHIRE;
D O I
10.7498/aps.64.127305
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this paper, the influences of the growth time of low-temperature (LT) GaN nucleation layer on the crystal quality and optical properties of GaN film are investigated. It is found that the optimal LT nucleation layer growth time can effectively reduce the crystal defects and is favorable to forming the annihilation of dislocations. GaN films are grown on c-plane sapphire substrates by metal-organic chemical vapor deposition. Crystal quality and optical properties are characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM), high-resolution X-ray diffraction (HRXRD), and photoluminescence spectra, respectively. In the AFM images, the island density decreases as growth time increases, while the size of island becomes larger and the uniformity of island size deteriorates as growth time increases, leading to the phenomenon that the number of interfaces formed during the nucleation island coalescence, first decrease and then increase as detected by SEM, which also induces the screw dislocation density and edge dislocation density to first decrease and then increase as measured by HRXRD. This first-decrease-and-then-increase variation trend is consistent with the first-increase-and-then-decrease variation trend of the ratio of the band edge emission peak intensity to the yellow luminescence peak intensity tested by photoluminescence, which is confirmed by HRXRD. It is shown that GaN islands with different sizes and densities could lead to different mechanisms of dislocation evolution, thereby forming GaN epitaxial layers with different dislocation densities and optical properties. Through controlling the nucleation time, GaN films with the smallest dislocation density could be obtained.
引用
收藏
页数:6
相关论文
共 40 条
  • [1] The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate
    Arslan, Engin
    Ozturk, Mustafa K.
    Duygulu, Oezguer
    Kaya, Ali Arslan
    Ozcelik, Suleyman
    Ozbay, Ekmel
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 94 (01): : 73 - 82
  • [2] Exploration of Ba3N2 flux for GaN single-crystal growth
    Bao, H. Q.
    Li, H.
    Wang, G.
    Song, B.
    Wang, W. J.
    Chen, X. L.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2008, 310 (12) : 2955 - 2959
  • [3] Study of high-quality GaN grown by OMVPE using an intermediate layer
    Benamara, M
    Liliental-Weber, Z
    Kellermann, S
    Swider, W
    Washburn, J
    Mazur, J
    Bourret-Courchesne, ED
    [J]. JOURNAL OF CRYSTAL GROWTH, 2000, 218 (2-4) : 447 - 450
  • [4] Improvement in a-plane GaN crystalline quality using wet etching method
    Cao Rong-Tao
    Xu Sheng-Rui
    Zhang Jin-Cheng
    Zhao Yi
    Xue Jun-Shuai
    Ha Wei
    Zhang Shuai
    Cui Pei-Shui
    Wen Hui-Juan
    Chen Xing
    [J]. CHINESE PHYSICS B, 2014, 23 (04)
  • [5] Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD
    Chen, J
    Zhang, SM
    Zhang, BS
    Zhu, JJ
    Shen, XM
    Feng, G
    Liu, JP
    Wang, YT
    Yang, H
    Zheng, WC
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 256 (3-4) : 248 - 253
  • [6] Research progress of substrate materials used for GaN-Based light emitting diodes
    Chen Wei-Chao
    Tang Hui-Li
    Luo Ping
    Ma Wei-Wei
    Xu Xiao-Dong
    Qian Xiao-Bo
    Jiang Da-Peng
    Wu Feng
    Wang Jing-Ya
    Xu Jun
    [J]. ACTA PHYSICA SINICA, 2014, 63 (06)
  • [7] Microstructure of heteroepitaxial GaN revealed by x-ray diffraction
    Chierchia, R
    Böttcher, T
    Heinke, H
    Einfeldt, S
    Figge, S
    Hommel, D
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (11) : 8918 - 8925
  • [8] COMPARISON OF DISLOCATION DENSITIES OF PRIMARY AND SECONDARY RECRYSTALLIZATION GRAINS OF SI-FE
    DUNN, CG
    KOCH, EF
    [J]. ACTA METALLURGICA, 1957, 5 (10): : 548 - 554
  • [9] Surface Modification and Significant Reduction of Yellow/Blue Luminescence of Gallium Nitride
    Fang, Z. L.
    Kang, J. Y.
    Shen, W. Z.
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (45) : 17652 - 17656
  • [10] Heying B, 1996, APPL PHYS LETT, V68, P643, DOI 10.1063/1.116495