Ion beam irradiation and characterization of GaAs based hetero-structures

被引：3
作者：
Dhamodaran, S
Sathish, N
Pathak, AP [1 ]
Rao, SVSN
Siddiqui, AM
Khan, SA
Avasthi, DK
Srinivasan, T
Muralidharan, R
Muntele, C
Ila, D
Emfietzoglou, D
机构：
[1] Univ Hyderabad, Sch Phys, Hyderabad 500046, Andhra Pradesh, India
[2] Univ Autonoma Metropolitana Iztapalapa, Dept Fis, Mexico City 09340, DF, Mexico
[3] Bhabha Atom Res Ctr, Div Nucl Phys, Bombay 400085, Maharashtra, India
[4] Jamia Millia Islamia, Dept Phys, New Delhi 110025, India
[5] Ctr Nucl Sci, New Delhi 110067, India
[6] Solid State Phys Lab, Delhi 110054, India
[7] Alabama A&M Univ, CIM, Normal, AL 35762 USA
[8] Univ Ioannina, Dept Med Phys, GR-45110 Ioannina, Greece
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2006年 / 242卷 / 1-2期
关键词：
ion beam mixing; HRXRD; RBS/channeling; heterostructures;
D O I：
10.1016/j.nimb.2005.08.155
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Ion beam induced modification and subsequent characterization of GaAs based hetero-structures (InGaAs/GaAs) have been investigated using ion channeling. The effect of Swift Heavy Ions (SHIs) on the elastic properties of these structures with varying layer thickness and incident ion fluence are discussed. A brief comparison with the results of high resolution XRD is presented. The angular scans of the irradiated samples are found to be broadened compared to the unirradiated samples, suggesting structural changes in the epilayer caused by Swift Heavy Ions (SHIs). This broadening in thick film is more compared with the thin film. Although these scans are considerably broad, reasonably good minima indicate that the lattice crystallinity is intact. (c) 2005 Elsevier B.V. All rights reserved.
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收藏
页码：538 / 541
页数：4
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