Epitaxial growth of GaN films on Si(110) substrates by rf-MBE

被引：5

作者：

Shen, X. Q. ^{[1
]}

Ide, T. ^{[1
]}

Shimizu, M. ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 | 2012年 / 9卷 / 3-4期

关键词：

rf-MBE; GaN films; Si(110) substrate; Al pre-deposition; MOLECULAR-BEAM EPITAXY; IMPACT; SI;

D O I：

10.1002/pssc.201100304

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaN films grown by rf-MBE on Si(110) substrates using AlN buffer layers are investigated. Single crystalline AlN films are obtained by Al pre-deposition during the buffer layer growth. 2-dimensional epitaxial growth mode of GaN is confirmed by in-situ RHEED observations. HRXRD results show that the FWHM values of diffraction peaks decrease with the increase of the film thickness. Atomically flat GaN surface morphology with mono-layer steps is obtained and crack-free GaN films until 2 mu m are successfully achieved. Micro-Raman measurements show that the tensile strain in the GaN films on Si(110) substrates is reduced compared to those on conventional Si(111) substrates. It is expectable that high-quality III-nitrides can be grown by rf-MBE technique for device applications. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：503 / 506

页数：4

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