The physical properties of nickel doped indium oxide thin film prepared by the sol-gel method and its potential as a humidity sensor

被引：10

作者：

Ibrahim, N. B. ^{[1
]}

Arsad, A. Z. ^{[1
]}

Yusop, Noratiqah ^{[1
]}

Baqiah, H. ^{[1
]}

机构：

[1] Univ Kebangsaan, Fac Sci & Technol, Sch Appl Phys, Bangi 43600, Selangor, Malaysia

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2016年 / 53卷

关键词：

Sensor; Spin coating; Magnet; DILUTED MAGNETIC SEMICONDUCTORS; FERROMAGNETISM;

D O I：

10.1016/j.mssp.2016.05.020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ni doped In2O3 (Ni-x[n(2-x)O(3): x=0.00, 0.02, 0.04, 0.06, 0.08 and 0.10) films have been successfully prepared by a sol-gel method. All films have nanograins, cubic structures and single phase. The Ni un-systematically affected the film thickness and surface roughness. All films showed high transmission percentage i.e. in the range of 92-99% at wavelength more than 380 nm. All films except film with x=0.02 and 0.06 have magnetic properties. It is also found that all of the films were sensitive towards the humidity changes and can be used as a humidity sensor. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：72 / 78

页数：7

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