Decreasing of the thermal conductivity of Si nanopillar/SiGe composite films investigated by using a piezoelectric photothermal spectroscopy

被引：3

作者：

Harada, Tomoki ^{[1
]}

Aki, Tsubasa ^{[1
]}

Ohori, Daisuke ^{[2
]}

Samukawa, Seiji ^{[2
,3
]}

Ikari, Tetsuo ^{[1
]}

Fukuyama, Atsuhiko ^{[1
]}

机构：

[1] Univ Miyazaki, 1-1 Gakuen Kibanadainishi, Miyazaki, Miyazaki 8892192, Japan

[2] Tohoku Univ, Inst Fluid Sci, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan

[3] Tohoku Univ, Adv Inst Mat Res, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷

基金：

日本学术振兴会;

关键词：

THERMOELECTRIC PERFORMANCE; SILICON; TRANSPORT;

D O I：

10.35848/1347-4065/ab82a6

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To investigate the decrease of thermal conductivity (kappa) of nanoscale Si materials, we conducted the piezoelectric photothermal (PPT) method for the highly periodic Si nanopillar arrays embedded in Si0.7Ge0.3. The PPT is an electrode free method that can measure a heat propagation in the parallel to the nanopillars direction. A distinctive dip was observed in the frequency-dependent PPT signal intensity. By focusing the dip frequency, kappa was estimated from the comparison with the model analysis based on the one-dimensional multilayer thermal diffusion equation. The estimated kappa was 0.19 +/- 0.07 W m(-1) K, in the parallel to the nanopillars direction. Since the considerable decrease of kappa was confirmed from the non-radiative recombination point of view, we found the present non-destructive PPT method is very useful to estimate kappa in the nanostructured devices for the thermoelectric application. (C) 2020 The Japan Society of Applied Physics

引用

页数：5

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