High-Efficiency Nanostructured Window GaAs Solar Cells

被引:120
作者
Liang, Dong [1 ]
Kang, Yangsen [2 ]
Huo, Yijie [2 ]
Chen, Yusi [2 ]
Cui, Yi [3 ,5 ]
Harris, James S. [2 ,3 ,4 ]
机构
[1] Stanford Univ, Dept Phys, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[3] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[4] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
[5] Stanford Inst Mat & Energy Sci, SLAC Natl Accelerator Lab, Menlo Pk, CA 94205 USA
关键词
GaAs; nanostructure; window layer; antireflection; solar cell; CORE-SHELL NANOWIRES; PERFORMANCE; RECOMBINATION; PHOTOVOLTAICS; ENHANCEMENT; ABSORPTION;
D O I
10.1021/nl402680g
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Nanostructures have been widely used in solar cells due to their extraordinary optical properties. In most nanostructured cells, high short circuit current has been obtained due to enhanced light absorption. However, most of them suffer from lowered lope circuit voltage and fill factor. One of the main challenges is formation of good junction and electrical contact. In particular nanostructures in GaAs only have shown unsatisfactory performances (below 5% in energy conversion efficiency) which cannot match their ideal material properties and the record photovoltaic performances in industry. Here we demonstrate a completely new design for nanostructured solar cells that combines nanostructured window layer, metal mesa bar contact with small area, high quality planar junction. In this way, we not only keep the advanced optical properties of nanostructures such as broadband and wide angle antireflection, but also minimize its negative impact on electrical properties. High light absorption, efficient carrier collection, leakage elimination, and good lateral conductance can be simultaneously obtained. A nanostructured window cell using GaAs junction and AlGaAs nanocone window demonstrates 17% energy conversion efficiency and 0.982 V high open circuit voltage.
引用
收藏
页码:4850 / 4856
页数:7
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