Generation of microwave oscillations in a no-base diode

被引：6

作者：

Darznek, SA ^{[1
]}

Lyubutin, SK ^{[1
]}

Rukin, SN ^{[1
]}

Slovikovskii, BG ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Electrophys, Ural Div, Ekaterinburg 620016, Russia

来源：

SEMICONDUCTORS | 2002年 / 36卷 / 05期

关键词：

Silicon; Microwave; Pulse Duration; Magnetic Material; Electromagnetism;

D O I：

10.1134/1.1478555

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The GHz-frequency microwave oscillations of voltage in a no-base p(+)-p-n(+) silicon diode driven by reverse current with a pulse duration of similar to300 ns and a current density of several kA/cm(2) were experimentally observed for the first time. The mechanism of initiation of these oscillations was theoretically considered. The frequency and the modulation percentage of the microwave oscillations were shown to depend on the current density and dopant-concentration gradient in the p-n-junction plane. (C) 2002 MAIK "Nauka / Interperiodica".

引用

页码：599 / 604

页数：6