Comments on "Modeling MOSFET surface capacitance behavior under non-equilibrium"

被引：15

作者：

He, J ^{[1
]}

Zhang, X ^{[1
]}

Wang, YY ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2006年 / 50卷 / 02期

关键词：

MOSFET; non-equilibrium; surface capacitance; device physics; modeling;

D O I：

10.1016/j.sse.2005.12.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Some expressions of the normalized surface capacitance for non-equilibrium MOSFET proposed in [Kapoor Abhishek, Jindal RP. Modeling MOSFET surface capacitance behavior under non-equilibrium. Solid-State Electron 2005;49:976-80] have been further discussed and the calculation of the MOSFET surface capacitance behavior under non-equilibrium conditions has been compared based on the device physics analysis. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：259 / 262

页数：4