The effect of polarity on MOCVD growth of thick InGaN

被引：15

作者：

Al Balushi, Zakaria Y. ^{[1
]}

Redwing, Joan M. ^{[1
,2
]}

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[2] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 02期

基金：

美国国家科学基金会;

关键词：

CHEMICAL-VAPOR-DEPOSITION; MULTIPLE-QUANTUM WELLS; LIGHT-EMITTING-DIODES; SURFACE-MORPHOLOGY; RAMAN-SCATTERING; STRUCTURAL-PROPERTIES; OPTICAL-PROPERTIES; STRAIN RELAXATION; EPITAXIAL-GROWTH; SINGLE-CRYSTALS;

D O I：

10.1063/1.4972967

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of thick III-polar and N-polar InGaN was investigated in order to understand the effect of polarity on the structural quality, surface morphology and optical properties of metalorganic chemical vapor deposition grown films. Our results demonstrate smooth (0.7 nm RMS) thick N-polar InGaN layers that are free of hexagonal hillocks and V-pits. An enhancement in the indium incorporation was observed in the N-polar InGaN (similar to 13.0%) when compared to III-polar films (similar to 7.5%) grown under identical conditions. These results provide an alternative route to the fabrication of thick InGaN for use in strain reducing schemes for deep-green and red emitters. Published by AIP Publishing.

引用

页数：5

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