Ab Initio Electronic Properties of Monolayer Phosphorus Nanowires in Silicon

被引：16

作者：

Drumm, D. W. ^{[1
,2
]}

Smith, J. S. ^{[2
]}

Per, M. C. ^{[2
,3
]}

Budi, A. ^{[1
]}

Hollenberg, L. C. L. ^{[1
]}

Russo, S. P. ^{[2
]}

机构：

[1] Univ Melbourne, Sch Phys, Parkville, Vic 3010, Australia

[2] RMIT Univ, Sch Appl Sci, Melbourne, Vic 3001, Australia

[3] CSIRO Mat Sci & Engn, Virtual Nanosci Lab, Parkville, Vic 3052, Australia

来源：

PHYSICAL REVIEW LETTERS | 2013年 / 110卷 / 12期

基金：

澳大利亚研究理事会;

关键词：

QUANTUM DOTS;

D O I：

10.1103/PhysRevLett.110.126802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Epitaxial circuitry offers a revolution in silicon technology, with components that can be fabricated on atomic scales. We perform the first ab initio calculation of atomically thin epitaxial nanowires in silicon, investigating the fundamental electronic properties of wires two P atoms thick, similar to those produced this year by Weber et al. For the first time, we catch a glimpse of disorder-related effects in the wires-a prerequisite for understanding real fabricated systems. Interwire interactions are made negligible by including 40 ML of silicon in the vertical direction (and the equivalent horizontally). Accurate pictures of band splittings and the electronic density are presented, and for the first time the effective masses of electrons in such device components are calculated. DOI: 10.1103/PhysRevLett.110.126802

引用

页数：5

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