High-output very small aperture laser and its near-field distribution properties - art. no. 60200L

被引：0

作者：

Gan, QQ ^{[1
]}

Song, SF ^{[1
]}

Chen, LH ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

Optoelectronic Materials and Devices for Optical Communications | 2005年 / 6020卷

关键词：

D O I：

10.1117/12.635973

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Very-Small-Aperture Laser with a 250 X 500 nm(2) aperture has been created on a 650nm edge emitting LD. The highest far-field output power is 1.9mW and the power per unit emission area is about 15 MW/mu m(2). The special fabrication process and high output power mechanism are demonstrated respectively. The near-field distribution properties are also analyzed theoretically and experimentally.

引用

页码：L200 / L200

页数：7

共 6 条

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