Transient effects of positive oxide charge on stress-induced leakage current in tunnel oxides

被引：6

作者：

Zous, NK ^{[1
]}

Wang, TH

Yeh, CC

Tsai, CW

Huang, CM

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[2] Winbond Elect, Hsinchu, Taiwan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 05期

关键词：

D O I：

10.1063/1.124497

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The role of positive oxide charge in excess low-level leakage current in tunnel oxides induced by Fowler/Nordheim stress is investigated. A correlation between stress-induced gate current and substrate current in an n-channel metal-oxide-semiconductor field-effect transistor is observed. Both the gate current and the substrate current exhibit a significant transient effect. The mechanisms of the stress-induced currents and their field dependence are explored. Positive oxide charge tunnel detrapping is found to be the cause of the observed transient behavior in the two currents. The stress-created positive oxide charge can be significantly annealed by substrate hot electron injection. (C) 1999 American Institute of Physics. [S0003-6951(99)02226-3].

引用

页码：734 / 736

页数：3

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