Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors

被引：32

作者：

Hwang, Wan Sik ^{[1
,2
]}

Remskar, Maja ^{[3
]}

Yan, Rusen ^{[2
]}

Kosel, Tom ^{[2
]}

Park, Jong Kyung ^{[4
]}

Cho, Byung Jin ^{[4
]}

Haensch, Wilfried ^{[1
]}

Xing, Huili ^{[2
]}

Seabaugh, Alan ^{[2
]}

Jena, Debdeep ^{[2
]}

机构：

[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[3] Jozef Stefan Inst, Dept Solid State Phys, SI-1000 Ljubljana, Slovenia

[4] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 04期

基金：

美国国家科学基金会;

关键词：

ATOMIC LAYERS; HIGH-MOBILITY; GRAPHENE; GROWTH;

D O I：

10.1063/1.4789975

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance of chemically synthesized (s-) MoS2 are indistinguishable from that of mechanically exfoliated (x-) MoS2, however, flat-band voltages are different, possibly due to polar chemical residues originating in the transfer process. Electron diffraction studies and Raman spectroscopy show the structural similarity of s-MoS2 to x-MoS2. This initial report on the behavior and properties of s-MoS2 illustrates the feasibility of electronic devices using synthetic layered 2D crystal semiconductors. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789975]

引用

页数：3

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