No-alloy ohmic contact to heavily carbon-doped GaAs

被引：0

作者：

Lian, P ^{[1
]}

Lv, H ^{[1
]}

Yin, T ^{[1
]}

Chen, CH ^{[1
]}

Xu, ZT ^{[1
]}

Ma, SH ^{[1
]}

Zhang, HQ ^{[1
]}

Liu, DJ ^{[1
]}

Ma, XY ^{[1
]}

Chen, LH ^{[1
]}

Shen, GD ^{[1
]}

机构：

[1] Beijing Polytech Univ, Dept Elect Engn, Beijing 100022, Peoples R China

来源：

1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICSICT.1998.785982

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The doping behavior elf carbon doped GaAs materials grown by low pressure MOVPE has been studied. Heavily carbon-doped GaAs layers with hole concentration in the range of 1.5 x 10(19)cm(-3) to 1.9 x 10(20)cm(-3) were obtained. Two different metallization schemes, Ti/Au and Au/Zn/Au, were deposited onto these heavily carbon-doped GaAs layers respectively And the contact resistance before and after alloying was measured using the transmission line method The relation between hole concentration in GaAs layers and Ohmic contact resistance has been obtained. The influence of alloy process on contact resistance has also been studied. The specified contact resistivity lower than 10(-6)Omega.cm has been achieved in GaAs/TiAu no-alloying structures.

引用

页码：681 / 684

页数：4

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