No-alloy ohmic contact to heavily carbon-doped GaAs

被引：0

作者：

Lian, P ^{[1
]}

Lv, H ^{[1
]}

Yin, T ^{[1
]}

Chen, CH ^{[1
]}

Xu, ZT ^{[1
]}

Ma, SH ^{[1
]}

Zhang, HQ ^{[1
]}

Liu, DJ ^{[1
]}

Ma, XY ^{[1
]}

Chen, LH ^{[1
]}

Shen, GD ^{[1
]}

机构：

[1] Beijing Polytech Univ, Dept Elect Engn, Beijing 100022, Peoples R China

来源：

1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICSICT.1998.785982

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The doping behavior elf carbon doped GaAs materials grown by low pressure MOVPE has been studied. Heavily carbon-doped GaAs layers with hole concentration in the range of 1.5 x 10(19)cm(-3) to 1.9 x 10(20)cm(-3) were obtained. Two different metallization schemes, Ti/Au and Au/Zn/Au, were deposited onto these heavily carbon-doped GaAs layers respectively And the contact resistance before and after alloying was measured using the transmission line method The relation between hole concentration in GaAs layers and Ohmic contact resistance has been obtained. The influence of alloy process on contact resistance has also been studied. The specified contact resistivity lower than 10(-6)Omega.cm has been achieved in GaAs/TiAu no-alloying structures.

引用

页码：681 / 684

页数：4

共 50 条

[11] FEMTOSECOND RELAXATION OF MINORITY ELECTRONS IN HEAVILY CARBON-DOPED GAAS [J].

DAVIDSON, A ;

COMPTON, RC ;

WISE, F ;

MARS, D ;

MILLER, J .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (04) :2255-2259

[12] Heavily carbon-doped GaAs grown on various oriented GaAs substrates by MOMBE [J].

Hatatani, S ;

Guo, LQ ;

Oh, JH ;

Grahn, HT ;

Konagai, M .

JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) :297-300

[13] OHMIC CONTACTS TO HEAVILY CARBON-DOPED P-ALXGA1-XAS [J].

KATZ, A ;

ABERNATHY, CR ;

PEARTON, SJ ;

WEIR, BE ;

SAVIN, W .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) :2276-2279

[14] Heavily carbon-doped GaAs grown by movpe using carbon tetrabromide for HBTs [J].

Wu, HZ .

MATERIALS RESEARCH BULLETIN, 1996, 31 (01) :97-105

[15] GAAS PSEUDOHETEROJUNCTION BIPOLAR-TRANSISTOR WITH A HEAVILY CARBON-DOPED BASE [J].

NOZAKI, S ;

SAITO, K ;

SHIRAKASHI, J ;

QI, M ;

YAMADA, T ;

TOKUMITSU, E ;

KONAGAI, M ;

TAKAHASHI, K ;

MATSUMOTO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B) :3840-3842

[16] Acceptor reactivation kinetics in heavily carbon-doped GaAs epitaxial layers [J].

Mimila-Arroyo, J ;

Bland, SW .

APPLIED PHYSICS LETTERS, 2000, 77 (08) :1164-1166

[17] STRAIN RELAXATION AND COMPENSATION DUE TO ANNEALING IN HEAVILY CARBON-DOPED GAAS [J].

HANNA, MC ;

MAJERFELD, A ;

SZMYD, DM .

APPLIED PHYSICS LETTERS, 1991, 59 (16) :2001-2003

[18] HEAVILY CARBON-DOPED GAAS GROWN BY LOW-PRESSURE OMVPE [J].

SHIMAZU, M ;

KIMURA, H ;

KAMON, K ;

SHIRAKAWA, T ;

MURAI, S ;

TADA, K .

INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (112) :173-178

[19] CHARACTERISTICS OF HEAVILY CARBON-DOPED GAAS BY LPMOCVD AND CRITICAL LAYER THICKNESS [J].

KIM, SI ;

EOM, KS ;

KIM, Y ;

KIM, MS ;

MIN, SK ;

LEE, C ;

KWAK, MH ;

MA, DS .

JOURNAL OF CRYSTAL GROWTH, 1993, 126 (2-3) :441-446

[20] INCORPORATION OF INTERSTITIAL CARBON DURING GROWTH OF HEAVILY CARBON-DOPED GAAS BY MOVCD AND MOMBE [J].

HOFLER, GE ;

BAILLARGEON, JN ;

KLATT, JL ;

HSIEH, KC ;

AVERBACK, RS ;

CHENG, KY .

INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (120) :631-634

← 1 2 3 4 5 →