Large area silicon drift detectors for X-rays - New results.

被引：17

作者：

Iwanczyk, JS

Tull, CR

Segal, JD

Kenney, CJ

Bradley, J

Hedman, B

Hodgson, KO

机构：

[1] Photon Imaging Inc, Northridge, CA 91324 USA

[2] Univ Hawaii, Dept Phys, Honolulu, HI 96822 USA

[3] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

[4] Stanford Univ, Stanford Synchrotron Radiat Lab, Stanford, CA 94305 USA

[5] Stanford Univ, Dept Chem, Stanford, CA 94305 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1999年 / 46卷 / 03期

基金：

美国国家航空航天局; 美国国家卫生研究院;

关键词：

D O I：

10.1109/23.775529

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Large area silicon drift detectors, consisting of 8 mm and 12 mm diameter hexagons, were fabricated on 0.35 mm thick high resistivity n-type silicon. An external FET and a low-noise charge sensitive preamplifier were used for testing the prototype detectors. The detector performance was measured in the range -75 ts 25 degrees C using Peltier cooling, and from 0.125 to 6 mu s amplifier shaping time. Measured energy resolutions were 159 eV FWHM and 263 eV FWHM for the 0.5 cm(2) and 1 cm(2) detectors, respectively (at 5.9 keV, -75 degrees C, 6 Cls shaping time). The uniformity of the detector response over the entire active area (measured using 560 nm light) was < 0.5 %.

引用

收藏

页码：284 / 288

页数：5

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