Scanning tunneling microscopy investigation of electronic properties of cobalt nanoislands supported by Cu-9at.%Al(111)

被引:2
作者
Yu, Yinghui [1 ]
Zhang, Yun [1 ,2 ]
She, Limin [1 ,2 ]
Wu, Ping [1 ,2 ]
Huang, Min [1 ]
Cao, Gengyu [1 ]
机构
[1] Chinese Acad Sci, Wuhan Inst Phys & Math, State Key Lab Magnet Resonance & Atom & Mol Phys, Wuhan 430071, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
基金
中国国家自然科学基金;
关键词
Scanning tunneling microscopy; Cobalt; Surface state; Density functional theory; Cu-9at.%Al(111); SURFACE-STATES; SPECTROSCOPY; FILMS; CU(111); GROWTH; CO; MAGNETOELECTRONICS; DIFFRACTION; ADSORPTION;
D O I
10.1016/j.susc.2012.12.011
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Growth and surface electronic states of Co nanoislands supported by Cu-9 at%Al(111) are investigated bylaw temperature scanning tunneling microscopy. Deposition of about 0.25 monolayer of Co atoms causes the formation of flat Co nanoislands with thicknesses ranging from monolayer to triple layer. Scanning tunneling spectroscopy measurements reveal that a Tamm-type surface state exists on the Co islands and its energy varies with the thicknesses and stacking manners. In addition, density functional theory calculations conclude that the surface states of the mono- and bilayer nanoislands mainly originate from the hybridization between Co d bands and sp bands of the substrate and the Co d(3z2-r2) minority-spin bands, respectively. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:172 / 176
页数:5
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