Calculation of ionized impurity-scattering probability with scattering angles in GaN

被引：2

作者：

Mallick, P. S. ^{[1
]}

Kundu, Janardan ^{[2
]}

Sarkar, C. K. ^{[3
]}

机构：

[1] VIT Univ, Sch Elect Sci, Vellore 632014, Tamil Nadu, India

[2] Kodaikanal Inst Technol, Dept Elect & Commun Engn, Kodaikanal 624104, Tamil Nadu, India

[3] Jadavpur Univ, Dept Elect & Telecommun Engn, Kolkata 700032, India

来源：

CANADIAN JOURNAL OF PHYSICS | 2008年 / 86卷 / 08期

关键词：

D O I：

10.1139/P08-027

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The probability of scattering by ionized impurities has been calculated as function of the scattering angle for various energy values of the electrons in gallium nitride at 77 K. It is found that for electron energies higher than 0.1 eV, almost-zero angle scatterings are most prevalent.

引用

页码：1023 / 1026

页数：4

共 11 条

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