Simple theoretical model for the temperature stability of InAs/GaAs self-assembled quantum dot lasers with different p-type modulation doping levels

被引：8
作者：
Jin, C. Y. [1 ,2 ,3 ]
Liu, H. Y. [4 ]
Jiang, Q. [1 ]
Hopkinson, M. [1 ]
Wada, O. [2 ,3 ]
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Natl Ctr Technol 3 5, Sheffield S1 3JD, S Yorkshire, England
[2] Kobe Univ, Div Frontier Res & Technol, CREATE, Kobe, Hyogo 6578501, Japan
[3] Kobe Univ, Dept Elect & Elect Engn, Grad Sch Engn, Kobe, Hyogo 6578501, Japan
[4] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 16期
关键词：
D O I：
10.1063/1.3003874
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have developed a simple theoretical model to account for the effects of different p-doping levels on the temperature-dependent performance of InAs/GaAs self-assembled quantum dot (QD) lasers. An assumption of equal occupation probabilities among QDs has been applied for operating conditions near the lasing threshold. Theoretical results indicate that there is an optimum p-doping region, which can provide the lowest temperature dependence of lasing threshold at room temperature. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3003874]
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页数：3
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