Investigation of the Subthreshold Swing in Vertical Tunnel-FETs Using H2 and D2 Anneals

被引：21

作者：

Vandooren, Anne ^{[1
]}

Walke, Amey M. ^{[1
,2
]}

Verhulst, Anne S. ^{[1
]}

Rooyackers, Rita ^{[1
]}

Collaert, Nadine ^{[1
]}

Thean, Aaron V. Y. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Indian Inst Technol, Dept Elect Engn, Ctr Excellence Nano Technol, Bombay 400076, Maharashtra, India

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 02期

关键词：

Gate-controlled leakage; heterojunction; interface traps; trap-assisted tunneling (TAT); tunnel FET (TFET); ACTIVATION-ENERGY ANALYSIS; INTERFACE TRAPS; LEAKAGE CURRENT; MOSFETS; JUNCTION; FIELD; MODEL;

D O I：

10.1109/TED.2013.2294535

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper analyzes both experimentally and by simulation the impact of traps on the transfer characteristics of tunnel-FETs (TFETs). The interface trap density in vertical heterojunction TFETs is varied by annealing in hydrogen or deuterium ambient. We show that a high-interface trap density (similar to 2 x 10(12)/cm(2)) results in a peak current in the device transfer characteristic at low-gate bias due to surface generation of carriers. The passivation of interface traps to state-of-the-art densities near 1-2 x 10(11)/cm(2) reduces this peak, but improves only marginally the overall subthreshold swing, indicating that the trap-assisted tunneling responsible for the swing degradation is mainly occurring through bulk traps in these devices.

引用

页码：359 / 364

页数：6

共 22 条

[1]

[Anonymous], 2011, TCAD SENT DEV MAN

[2]

[Anonymous], P IEEE IEDM DEC

[3]

[Anonymous], P IEEE IEDM DEC

[4] Effects of deuterium anneal on MOSFETs with HfO2 gate dielectrics [J].