Narrow spectral linewidth of single zinc-blende GaN/AlN self-assembled quantum dots

被引：20

作者：

Sergent, S. ^{[1
]}

Kako, S. ^{[2
]}

Buerger, M. ^{[3
]}

As, D. J. ^{[3
]}

Arakawa, Y. ^{[1
,2
]}

机构：

[1] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan

[2] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[3] Univ Paderborn, Dept Phys, D-33098 Paderborn, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 15期

基金：

日本学术振兴会;

关键词：

OPTICAL-PROPERTIES;

D O I：

10.1063/1.4824650

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study by microphotoluminescence the optical properties of single self-assembled zinc-blende GaN/AlN quantum dots grown by plasma-assisted molecular beam epitaxy. As opposed to previous reports, the high quality of such zinc-blende GaN quantum dots allows us to evidence a weak acoustic phonon sideband as well as a limited spectral diffusion. As a result, we report on resolution-limited quantum dot linewidths as narrow as 500 +/- 50 mu eV. We finally confirm the fast radiative lifetime and high-temperature operation of such quantum dots. (C) 2013 AIP Publishing LLC.

引用

收藏

页数：4

相关论文

共 25 条

[1] Size dependent biexciton binding energies in GaN quantum dots [J].

Amloy, S. ;

Yu, K. H. ;

Karlsson, K. F. ;

Farivar, R. ;

Andersson, T. G. ;

Holtz, P. O. .

APPLIED PHYSICS LETTERS, 2011, 99 (25)

[2] Photoluminescence of single GaN/AlN hexagonal quantum dots on Si(111): Spectral diffusion effects [J].

Bardoux, R. ;

Guillet, T. ;

Lefebvre, P. ;

Taliercio, T. ;

Bretagnon, T. ;

Rousset, S. ;

Gil, B. ;

Semond, F. .

PHYSICAL REVIEW B, 2006, 74 (19)

[3] Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory [J].

Bardoux, R. ;

Guillet, T. ;

Gil, B. ;

Lefebvre, P. ;

Bretagnon, T. ;

Taliercio, T. ;

Rousset, S. ;

Semond, F. .

PHYSICAL REVIEW B, 2008, 77 (23)

[4] Acoustic phonon broadening mechanism in single quantum dot emission [J].

Besombes, L ;

Kheng, K ;

Marsal, L ;

Mariette, H .

PHYSICAL REVIEW B, 2001, 63 (15)

[5] Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots [J].

Bretagnon, T ;

Lefebvre, P ;

Valvin, P ;

Bardoux, R ;

Guillet, T ;

Taliercio, T ;

Gil, B ;

Grandjean, N ;

Semond, F ;

Damilano, B ;

Dussaigne, A ;

Massies, J .

PHYSICAL REVIEW B, 2006, 73 (11)

[6] Temperature dependence of the zero-phonon linewidth in quantum dots:: An effect of the fluctuating environment [J].

Favero, I. ;

Berthelot, A. ;

Cassabois, G. ;

Voisin, C. ;

Delalande, C. ;

Roussignol, Ph. ;

Ferreira, R. ;

Gerard, J. M. .

PHYSICAL REVIEW B, 2007, 75 (07)

[7] Excitonic properties of strained wurtzite and zinc-blende GaN/AlxGa1-xN quantum dots [J].

Fonoberov, VA ;

Balandin, AA .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (11) :7178-7186

[8] Study of isolated cubic GaN quantum dots by low-temperature cathodoluminescence [J].

Garayt, JP ;

Gérard, JM ;

Enjalbert, F ;

Ferlazzo, L ;

Founta, S ;

Martinez-Guerrero, E ;

Rol, F ;

Araujo, D ;

Cox, R ;

Daudin, B ;

Gayral, B ;

Dang, LS ;

Mariette, H .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 26 (1-4) :203-206

[9] Exciton and biexciton luminescence from single hexagonal GaN/AlN self-assembled quantum dots [J].

Kako, S ;

Hoshino, K ;

Iwamoto, S ;

Ishida, S ;

Arakawa, Y .

APPLIED PHYSICS LETTERS, 2004, 85 (01) :64-66

[10] Size-dependent radiative decay time of excitons in GaN/AlN self-assembled quantum dots [J].

Kako, S ;

Miyamura, M ;

Tachibana, K ;

Hoshino, K ;

Arakawa, Y .

APPLIED PHYSICS LETTERS, 2003, 83 (05) :984-986