An improved heterojunction-emitter bipolar transistor using δ-doped and spacer layers

被引：6

作者：

Lin, YS

Hsu, WC

Lu, SY

Su, JS

Lin, W

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[2] Land Mark Optoelect Corp, Yung Kang, Taiwan

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1999年 / 59卷 / 01期

关键词：

delta-doped; HBT; HEBT; offset voltage; NDR;

D O I：

10.1016/S0254-0584(99)00029-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Three types of InGaP/GaAs heterojunction-emitter bipolar transistors (HEBTs) have been grown by low-pressure metalorganic chemical vapor deposition. The current gains are 18, 40, and 55 for the conventional, single delta-doped, and double delta-doped HEBTs, respectively. Moreover, the offset voltage of the double delta-doped structure is as low as 70 mV. Experimental results demonstrated that the current gain and offset voltage can be improved by using the delta-doped emitter structure and undoped spacers on both sides of the base. (C) 1999 Elsevier Science S.A. All rights reserved.

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收藏

页码：91 / 95

页数：5

相关论文

共 11 条

[1] HIGH-SPEED, LOW-NOISE INGAP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

FRESINA, MT ;

AHMARI, DA ;

MARES, PJ ;

HARTMANN, QJ ;

FENG, M ;

STILLMAN, GE .

IEEE ELECTRON DEVICE LETTERS, 1995, 16 (12) :540-541

[2] NEGATIVE OUTPUT DIFFERENTIAL RESISTANCE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

GAO, GB ;

FAN, ZF ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1992, 61 (02) :198-200

[3] ELEMENTARY THEORY OF HETEROJUNCTIONS [J].

HARRISON, WA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :1016-1021

[4]

KOAYASHI T, 1989, J APPL PHYS, V65, P4898

[5] An improved In0.5Ga0.5P/GaAs double heterostructure-emitter bipolar transistor using emitter edge-thinning technique [J].

Lin, YS ;

Wu, YH ;

Su, JS ;

Hsu, WC ;

Ho, SD ;

Lin, W .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (4A) :2007-2009

[6] Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers [J].

Lin, YS ;

Shieh, HM ;

Hsu, WC ;

Su, JS ;

Huang, JZ ;

Wu, YH ;

Ho, SD ;

Lin, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03) :958-961

[7] HIGH-CURRENT-GAIN GA-0.51IN-0.49P/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].

LU, SS ;

HUANG, CC .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (04) :214-216

[8] HETEROJUNCTION BIPOLAR-TRANSISTOR USING A (GA,IN)P EMITTER ON A GAAS BASE, GROWN BY MOLECULAR-BEAM EPITAXY [J].

MONDRY, MJ ;

KROEMER, H .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) :175-177

[9] THE DELTA-DOPED FIELD-EFFECT TRANSISTOR [J].

SCHUBERT, EF ;

PLOOG, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08) :L608-L610

[10] ELECTRICAL CHARACTERISTICS OF A LATTICE-MATCHED IN0.53AL0.22GA0.25AS/INP HETEROJUNCTION BIPOLAR-TRANSISTOR WITH ZERO POTENTIAL SPIKE AT EMITTER-BASE HETEROJUNCTION [J].

WU, YH ;

SU, JS ;

HSU, WC ;

LIN, W ;

LIU, WC .

SOLID-STATE ELECTRONICS, 1995, 38 (10) :1755-1757