Thickness contrast of few-layered graphene in SEM

被引:38
作者
Park, Min-Ho [1 ]
Kim, Tae-Hoon [1 ]
Yang, Cheol-Woong [1 ]
机构
[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, Gyeonggi Do, South Korea
基金
新加坡国家研究基金会;
关键词
graphene; thickness contrast; SEM; work function; CARBON; FUNCTIONALIZATION;
D O I
10.1002/sia.4995
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We observed graphene flakes on a SiO2/Si substrate and confirmed the variation in the thickness of the flakes by optical microscopy, Raman spectroscopy and scanning electron microscopy (SEM). We were able to clearly distinguish the thickness variation of the graphene provided a low primary electron acceleration voltage was used. It was found that different contrasts in SEM images at low acceleration voltages could be attributed to the fact that the generation of secondary electrons emitted from the graphene was affected by the different work functions that corresponded to the number of graphene layers. Copyright (C) 2012 John Wiley & Sons, Ltd.
引用
收藏
页码:1538 / 1541
页数:4
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