Swift heavy ion beam induced recrystallization of amorphous Si layers

This paper focuses on the role of electronic energy loss in ion beam induced epitaxial crystallization for which swift heavy ions (100 MeV Ag7+) have been used. We observed good epitaxial crystallization at 473-623 K, which is a much lower temperature regime as compared to the one needed for conventional solid phase epitaxial growth. A systematic planar recrystallization has been observed as a function of temperature giving rise to an activation energy of 0.25 +/- 0.02 eV. A possible mechanism of recrystallization is discussed on the basis of the production of vacancies along the track of the swift heavy ion and their migration at elevated temperatures. (c) 2005 Elsevier B.V. All rights reserved.